| PART |
Description |
Maker |
| K4D28163HD |
2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| K4D26323RA-GC |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| W9725G6KB25A W9725G6KB-25 W9725G6KB-18 W9725G6KB-3 |
DLL aligns DQ and DQS transitions with clock, Data masks (DM) for write data, Write Data Mask
|
Winbond
|
| HI-8787 HI-8787PQI HI-8787PQT HI-8788 HI-8788PQI H |
16 Bit Parallel data converted to 429 and 561 serial data out
ARINC INTERFACE DEVICE 16-BIT PARALLEL DATA CONVERTED 429&561 SERIAL DATA OUT
512 MACROCELL 3.3 VOLT ZERO POWER ISP CP - NOT RECOMMENDED for NEW DESIGN
|
HOLTIC[Holt Integrated Circuits]
|
| 422B 422E |
Max voltage:24V; 200mA; data processing data line protector. For data processing equipment, long line transmission systems, control processing computers, building managenent systems
|
Protek Devices
|
| RC336DPI RCV336DPI |
V.34 Data V.17 Fax, Modem Data Pump .34数据.17传真，数据传输泵
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC
|
| W9751G6KB-18 W9751G6KB-25 W9751G6KB-3 W9751G6KB25A |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| M13S5121632A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| W9725G6JB25I |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| AD1801JST |
1400 kbps DATA, MODEM-DATA/FAX/VOICE, PQFP128 TQFP-128
|
Analog Devices, Inc.
|
| M14D2561616A-2E |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
